Sharp Silicon Carbide Power MOSFET Enables Next-Generation Solar Energy Conversion for Delta

Klaus Gremmelspacher, Director of Solar Inverter R&D at Delta Energy Systems, stated, “By leveraging silicon carbide power MOSFETs, Taida’s next-generation solar inverters have achieved a new benchmark in power density. With the goal of developing an industry-leading, high-efficiency power converter, Cree’s silicon carbide power MOSFETs are essential.”

Cree first introduced its silicon carbide power MOSFET in 2011, offering reduced losses and improved efficiency and power density in solar inverters. By 2013, the second generation of these devices was launched with even better performance. Following this breakthrough, Delta Energy Systems, a global leader in power management solutions, decided to integrate Cree’s SiC power MOSFETs into their next-gen solar inverters. After implementing Cree’s 1200V tantalum carbide power MOSFET in an 11kW solar inverter, Delta expanded the DC input voltage range while maintaining or enhancing the efficiency compared to previous models.

Delta expects that the 11kW inverter introduced in Q2 2013 will benefit from the increased DC input voltage, which now reaches 1000V instead of 900V, thanks to the use of Cree’s advanced power MOSFETs.

Dr. Scott Allen, Senior Marketing Director at Cree Power, added, “We’re proud and honored that companies like Delta Energy Systems are choosing our silicon carbide power MOSFETs. The 1200V and 160mΩ devices they are using are not only highly reliable but also offer excellent performance and cost advantages. As a product launched in 2011, they remain competitive in the market. Customers focused on cutting-edge technology are now adopting our SiC MOSFETs, which help reduce the size, weight, and cost of solar inverters by up to 50% compared to traditional silicon-based solutions, while maintaining or improving efficiency levels.”